APTGT600SK60 APTGT600SK60 ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 1 - 5 absolute maximum ratings * specification of igbt device but output current must be limited to 500a to not exceed a delta of temperature greater than 100c for the connectors. these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. q1 g1 0/ vbus out e1 cr2 vbus vbus out 0/vbus e1 g1 s ymbol parameter ma x ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 700 * i c continuous collector current t c = 80c 600 * i cm pulsed collector current t c = 25c 800 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 2300 w rbsoa reverse bias safe operating area t j = 150c 1200a @ 550v v ces = 600v i c = 600a* @ tc = 80c applicatio n ? ac and dc motor control ? switched mode power supplies features ? trench + field stop igbt ? technology - low voltage drop - low tail current - switching freque nc y up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance - symmetrical design - m5 power connectors ? high level of integration benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? low profile buck chopper trench + field stop igbt ? power modul e
APTGT600SK60 APTGT600SK60 ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 2 - 5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 600v 750 a t j = 25c 1.4 1.8 v ce(sat) collector emitter saturation voltage v ge =15v i c = 600a t j = 150c 1.5 v v ge(th) gate threshold voltage v ge = v ce , i c = 2ma 5.0 5.8 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 800 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 49 c oes output capacitance 3.1 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 1.5 nf t d(on) turn-on delay time 130 t r rise time 55 t d(off) turn-off delay time 250 t f fall time inductive switching (25c) v ge = 15v v bus = 300v i c = 600a r g = 2 ? 60 ns t d(on) turn-on delay time 145 t r rise time 60 t d(off) turn-off delay time 320 t f fall time 80 ns e on turn on energy 10.5 e off turn off energy inductive switching (150c) v ge = 15v v bus = 300v i c = 600a r g = 2 ? 21 mj chopper diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 750 i rm maximum reverse leakage current v r =600v t j = 150c 1000 a i f(a v) maximum average forward current 50% duty cycle tc = 80c 600 a t j = 25c 1.5 1.9 v f diode forward voltage i f = 600a v ge = 0v t j = 150c 1.4 v t j = 25c 125 t rr reverse recovery time t j = 150c 220 ns t j = 25c 27 q rr reverse recovery charge i f = 600a v r = 300v di/dt =5000a/s t j = 150c 57 c
APTGT600SK60 APTGT600SK60 ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 3 - 5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.065 r thjc junction to case diode 0.11 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 175 t stg storage temperature range -40 125 t c operating case temperature -40 100 c to heatsink m6 3 5 torque mounting torque for terminals m5 2 3.5 n.m wt package weight 280 g package outline (dimensions in mm)
APTGT600SK60 APTGT600SK60 ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 4 - 5 typical performance curve output characteristics (v ge =15v) t j =25c t j =25c t j =125c t j =150c 0 200 400 600 800 1000 1200 00.511.522.5 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =19v v ge =9v 0 200 400 600 800 1000 1200 00.511.522.533.5 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =25c t j =125c t j =150c 0 200 400 600 800 1000 1200 567891011 v ge (v) i c (a) energy losses vs collector current eon eoff er 0 5 10 15 20 25 30 35 40 0 200 400 600 800 1000 1200 i c (a) e (mj) v ce = 300v v ge = 15v r g = 2 ? t j = 150c eon eon eoff eoff er 0 10 20 30 40 50 60 70 024681012 gate resistance (ohms) e (mj) v ce = 300v v ge =15v i c = 600a t j = 150c switching energy losses vs gate resistanc e reverse bias safe operating area 0 200 400 600 800 1000 1200 1400 0 100 200 300 400 500 600 700 v ce (v) i c (a) v ge =15v t j =150c r g =2 ? maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) igbt
APTGT600SK60 APTGT600SK60 ? rev 0 may, 2005 apt website ? http:/ / www.advancedpower.com 5 - 5 forward characteristic of diode t j =25c t j =125c t j =150c 0 200 400 600 800 1000 1200 0 0.4 0.8 1.2 1.6 2 v f (v) i c (a) hard switching zcs zvs 0 20 40 60 80 100 120 0 200 400 600 800 1000 i c (a) fmax, operating frequency (khz) v ce =300v d=50% r g =2 ? t j =150c t c =85c operating frequency vs collector curren t maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0. 02 0. 04 0. 06 0. 08 0.1 0. 12 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) diode apt re s e rves the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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